C-V CHARACTERIZATION AND ELECTRIC PARAMETERS OF ZRO2 RECEIVED BY UV STIMULATED PLASMA ANODIZING

Abstract

Low temperature technologies creating metals oxides are promising solution for formation integral circuit elements. In this report have been investigated the electric properties of zirconia (ZrO2) received by low temperature (⁓ 4000 C) UV stimulated plasma anodizing. Zirconia is a potential high-k dielectric material with potential applications as agate insulator in transistors. This
dielectricis distinguished by good electric parameters. For this purpose we used C-V characterization technic and calculate dielectric constant, flatband voltage, threshold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument Semiconductor Parameter Analyzer 4200, oxide thickness was measured by
reflectometer – MprobeVis System