NEUTRON SENSORS BASED ON SILICON-GRAPHENE NANOSYSTEMS ENRICHED BY BORON10 ISOTOPE

Abstract

The aim of the paper is elaboration of precise and fast neutron sensors using B isotopes. The work’s objectives include: Development of physical principles of work of 10B isotopes doped semiconductor sensitive nanoelements and basis of their fabrication technology; By using of modern technologies of preparation of Boron isotopes enriched elementary semiconductor - Si based sensory elements development of high-efficient prototypes of nanosensors of the new construction; To study the peculiarities of technology of growth the semiconductor Si thin films doped by 10B isotopes and their properties and investigating the usage of the Graphene FETs (GFET), as instruments to increase the sensitivity of measurement leading due to the importance of the target of ultra-sensitive neutron detection.