MODELING AND OPTIMIZATION OF PROPERTIES OF GA2O3-BASED QUANTUM STRUCTURES IN ORDER TO ACHIEVE HOLE CONDUCTIVITY

Abstract

In this project, we investigate the properties of Ga2O3-based quantum structure with the aim of improving hole conductivity in the oxide. Ga2O3 is a promising material for electronic and optoelectronic applications due to its ultra-wide band gap and high breakdown voltage. However, its low hole mobility and concentration limit its performance in some applications. Recent studies have shown that Ga2O3 thin films can exhibit surface p-type conductivity under certain growth conditions. In this work, we use the finite-element method to model the electronic properties of Ga2O3 quantum well with triangular potential barrier. Our results provide insights into the design and optimization of Ga2O3-based quantum structures for improved hole conductivity in the oxide.