CAN THE FORMATION OF COMPENSATING DONORS BE SUPPRESSED IN MODULATED P-DOPPED GALLIUM OXIDE QUANTUM WELLS?

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T. Tchelidze
Department of Exact and Natural Sciences, Tbilisi State University, Georgia
Z. Machavariani
Department of Exact and Natural Sciences, Tbilisi State University, Georgia; Doctoral School, Kutaisi International University, Georgia
E. Chikoidze
University Paris Saclay, Grp Etud Matiere Condensee GEMaC, UVSQ CNRS, France

Abstract

The actual problem of obtaining hole conductivity in ultra-wide bandgap semiconductor Ga2O3 is considered. It is proposed to use Aa2O3/Ga2O3 quantum structures for increasing hole concentration, and their mobility. The dependence of theses parameters on system geometry and composition is studied.

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Published: Nov 9, 2023

Article Details

Issue
Vol. 12 (2023)
Section
Oral Session C: Applications in Energy and Transportation
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