CAN THE FORMATION OF COMPENSATING DONORS BE SUPPRESSED IN MODULATED P-DOPPED GALLIUM OXIDE QUANTUM WELLS?

Authors

  • T. Tchelidze Department of Exact and Natural Sciences, Tbilisi State University, Georgia
  • Z. Machavariani Department of Exact and Natural Sciences, Tbilisi State University, Georgia; Doctoral School, Kutaisi International University, Georgia
  • E. Chikoidze University Paris Saclay, Grp Etud Matiere Condensee GEMaC, UVSQ CNRS, France

Abstract

The actual problem of obtaining hole conductivity in ultra-wide bandgap semiconductor Ga2O3 is considered. It is proposed to use Aa2O3/Ga2O3 quantum structures for increasing hole concentration, and their mobility. The dependence of theses parameters on system geometry and composition is studied.

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Published

2023-11-09

Issue

Vol. 12 (2023)

Section

Oral Session C: Applications in Energy and Transportation